Indirect Exchange Interaction between F and AF Layers

摘要

In this work we represent a comprehensive study of indirect exchange coupling between ferromagnetic (F) and antiferromagnetic (AF) layers carried out on NiFe(5nm)/Cu(d)/IrMn(10nm) thin film structure. NiFe/Cu/IrMn films were fabricated by magnetron sputtering with a seed and a capping layers of Ta(5nm). The thickness d of the Cu spacer was varied from 0.2nm to 2nm. The Cu spacer thickness was carefully controlled by sputter condition and the thickness was confirmed by cross sectional transmission electron microscopy (TEM) and Auger depth profile.