Current-driven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions

摘要

The discovery of the high tunnel magnetoresistance (TMR) in the MgO-based magnetic tunnel junctions (MTJs)[1]-[3] at room temperature has aroused considerable interest in scientific studies and potential advanced magnetic random access memories (MRAMs) applications. Recently, two progresses were made in CoFeB/MgO/CoFeB MTJs with Co{sub}40Fe{sub}40B{sub}20 electrodes: 1) The TMR ratio exceeding 350% was realized[4] and 2) current-driven magnetization switching at critical current densities (J{sub}c) less than 10{sup}6A/cm{sup}2 were demonstrated.[5]