Thermal Stability in Textured CoFe/IrMn Films with Os Buffer and Barrier Layer

摘要

Recently, the developments of the spintronics devices have been well expanded. The behaviors of the basic unit part in the magnetic devices are dependence on many factors, among which crystal structure and thermal stability of magnetic films play an important role. Suitable buffer layer is needed for antiferromagnetic (AFM) layer to induce the FM/AFM coupling in magnetic tunnel junction (MTJ) or spin valve (SV) structures. In this article, we extend our previous works [1] to investigate the characterization of the Osmium (Os) in a textured magnetic multi-layer structure system. The properties and characterization of buffer layer and diffusion barrier using Os are reported.