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Nanosecond magnetization reversal of highly coercive FePt with pulsed microcoils: experiments and modelling

机译:脉冲微膜高矫顽菌纳秒磁化逆转:实验和建模

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As magnetization reversal speeds in applications approach the nanosecond range and recording media with high anisotropies to increase bit density are envisioned, there is a need to study the switching of high coercivity materials at short timescales. Most studies to date focus either on materials with a low magnetocrystalline anisotropy or on μs times scales and longer. A way to produce magnetic fields that are strong and fast at the same time, is to drive very short current pulses through very small coils. The coils used in this work consist of a single turn of a 30μm thick copper film with a core diameter of 50μm. Due to the small size of the system and the low inductance of the coil, current rise times of less than 10ns are possible and peak magnetic fields can reach 50T [1], while the energy stored in the capacitor bank is only of the order of 0.1J. This system is well suited to study the magnetization reversal of highly anisotropic FePt of the L1{sub}0 phase, which is seen as a promising candidate for future high density magnetic recording due to its low critical grain size for superparamagnetism and its corrosion resistance. The FePt films studied here were grown epitaxially by pulsed laser deposition on MgO(100) substrates at 800°C and have coercivities above 5T in static measurements at room temperature [2]. Figure 1 shows the magnetic field pulse and the response of the magnetization of a 40nm thick FePt film with perpendicular anisotropy μ{sub}0H{sub}C=5.5T). A fast polar Kerr effect setup is employed to measure the magnetization response to the external field. The magnetization is switched by the rising edge of the field pulse and switched back by the falling edge, which reaches into the negative range, as the system behaves as an under-damped oscillator.
机译:随着应用中的磁化反转速度接近纳秒范围和具有高各向异性的记录介质以增加比特密度,需要研究在短时间间接的高矫顽力材料的切换。大多数研究迄今为止迄今为止的材料,无论是低磁镀各向异性的材料还是μs时尺度和更长的。一种生产磁场的方法,该磁场同时且通过非常小的线圈驱动非常短的电流脉冲。本作工作中使用的线圈由芯直径为50μm的30μm厚的铜膜的单匝。由于系统的尺寸和线圈的低电感,可能的电流上升时间小于10ns,并且峰值磁场可以达到50t [1],而存储在电容器组中的能量仅为顺序0.1J。该系统非常适合于研究L1 {Sub} 0相的高端各向异性偏移的磁化反转,这被视为由于其低抗缩小粒度的未来高密度磁记录的有希望的候选者,以及其耐腐蚀性。这里研究的备用膜在800℃下通过MgO(100)衬底上的脉冲激光沉积在外延上外延生长,并且在室温下在静态测量中具有高于5T的凝固性[2]。图1示出了磁场脉冲和40nm厚的孔膜的磁化响应,垂直各向异性μ{sub} 0h {sub} c = 5.5t)。采用快速极性KERR效果设置来测量外部场的磁化响应。通过场脉冲的上升沿切换磁化,并通过下降沿切换,该下降沿到达负范围,因为系统的表现为欠阻尼的振荡器。

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