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Focused Magneto-optical Kerr Effect measurement of single pseudo spin-valve ring elements

机译:聚焦磁光克尔效应测量单伪旋转阀环元件

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Micron-scale ferromagnetic ring elements have recently become a subject of interest due to their suitability for use as MRAM elements[1] and magnetic bio-sensors[2]. The majority of work has so far concentrated on single layer ring structures, the properties of which have been well characterised using a variety of experimental techniques[3]. However, in a real magneto-electric device it is likely that either a Giant Magneto-resistive (GMR) or Tunnelling Magneto-resistive multi-layer configuration would be used to increase the available signal, hence, the characterisation of multilayer ring elements is imperative. Currently only electrical resistance measurements[4] and micro-magnetic simulations [5] have been carried out which, while allowing an understanding of the states and switching dynamics of simple pseudo spin-valve (PSV) ring structures, have not permitted a broader study of element geometries.
机译:由于它们适用于MRAM元素[1]和磁性生物传感器[2],微米级铁磁环元件最近成为感兴趣的主题[2]。到目前为止,大部分工作都集中在单层环结构上,其特性已经利用各种实验技术进行了很好的表征[3]。然而,在真实的磁电气设备中,可能使用巨大的磁电阻(GMR)或隧道磁阻多层配置来增加可用信号,因此,多层环元件的表征是势在一性的。目前仅进行了电阻测量[4]和微磁模拟[5],同时允许理解简单伪旋转阀(PSV)环结构的状态和切换动力学,尚不允许更广泛的研究元素几何形状。

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