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首页> 外文期刊>Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology >Pseudo spin-valves with different spacer thickness as sensing elements of mechanical strain
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Pseudo spin-valves with different spacer thickness as sensing elements of mechanical strain

机译:具有不同隔离层厚度的伪自旋阀作为机械应变的感应元件

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Giant magnetoresistance (GMR) effect in cobalt based pseudo spin-valves (SV) is combined with the inverse magnetostriction in sensors of mechanical strain. SV with Co/Au/Co core structure were deposited onto the flexible 125 μm thick polyimide substrates. The influence of magnetostriction on GMR was studied in bending current-in-plane configuration. Total relative strain was between -8.6 × 10 ~(-3) (compression) and 8.6 × 10 ~(-3) (tension). SV were designed with respect to the oscillating nature of exchange coupling force vs. spacer thickness. The period of oscillations is not changing under the applied stress in our experimental configuration. From the magnetoresistance ratio vs. strain dependences it follows that the output signal of the strained sensor vs. unloaded one could be improved by a proper choice of the spacer thickness t _s. If t _s = 4 nm the relative output is 36% and for t _s = 2.4 nm it is 34%, however, in this case only in the half range of the strain between 0 and ±8.6 × 10 ~(-3). For t _s = 2.2 nm the relative output is only 10%.
机译:钴基伪自旋阀(SV)中的巨磁阻(GMR)效应与机械应变传感器中的逆磁致伸缩相结合。将具有Co / Au / Co芯结构的SV沉积到125μm厚的柔性聚酰亚胺基板上。在平面电流弯曲结构中研究了磁致伸缩对GMR的影响。总相对应变在-8.6×10〜(-3)(压缩)和8.6×10〜(-3)(张力)之间。 SV是根据交换耦合力与垫片厚度的振荡特性而设计的。在我们的实验配置中,振荡周期在施加的应力下没有变化。从磁阻比对应变的依赖关系可以得出,通过适当选择垫片的厚度t _s,可以改善应变传感器对空载传感器的输出信号。如果t _s = 4 nm,相对输出为36%,而对于t _s = 2.4 nm,则相对输出为34%,但是,在这种情况下,仅在应变的一半范围(0到±8.6×10〜(-3))之间。对于t s = 2.2 nm,相对输出仅为10%。

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