POLYSILICON-ON-INSULATOR LAYERS AT CRYOGENIC TEMPERATURES AND HIGH MAGNETIC FIELDS

摘要

Moderately and heavily boron doped polysilicon-on-insulator layers before and after laser recrystallization were studied at cryogenic temperatures in high magnetic fields up to 14 T. Piezoresistance and magnetoresistance of poly-Si layers with different carrier concentration were investigated. It was shown that laser-recrystallized poly-Si layers could be used to develop piezoresistive sensors, operating at cryogenic temperatures and high magnetic fields.