SiGe HETEROJUNCTION BIPOLAR TRANSISTORS ON INSULATING SUBSTRATES

摘要

This paper reviews progress in SiGe HBT technology as well as work on Si bipolar transistors on insulator (SOI) along with current work on SiGe HBTs on SOI. The state-of-the-art results on self-aligned selective epitaxially grown SiGe HBTs and SiGe:C HBTs clearly indicate the extendibility of these technologies into high-speed wired communication applications. Special emphasis is put on Silicon-on-Insulator HBT devices in vertical and lateral design. Research work on SOI SiGe HBT technology by a UK consortium has come up with a number of novel solutions, which are outlined. Moreover, issues regarding SOI operation in harsh environments are discussed.