Accurate Three-Dimensional Simulation of Electron Mobility Including Electron-Electron and Electron-Dopant Interactions

摘要

Electron-electron and electron-impurity interactions play an important role in ultra-small MOSFETs. Previous simulation approaches (particle-mesh and particle-particle particle-mesh methods) were found to be very time consuming. Here a fast multi-pole method is used instead which was found to yield physically correct results in bulk mobility and device simulations within significantly decreased simulation times.