Modeling of avalanche photodiodes by Crosslight APSYS

摘要

Avalanche photodiodes (APDs) are being widely utilized in various application fields where a compact technology computer aided design (TCAD) kit capable for APD modeling is highly demanded. In this work, based on the advanced drift and diffusion model with commercial software, the Crosslight APSYS, avalanche photodiodes, especially the InP/InGaAs separate absorption, grading, charge and multiplication (SAGCM) APDs for high bit-rate operation have been modeled. Basic physical quantities like band diagram, optical absorption and generation are calculated. Performance characteristics such as dark- and photo-current, photoresponsivity/multiplication gain, breakdown voltage, excess noise, frequency response and bandwidth etc., are simulated. The modeling results are selectively presented, analyzed, and some of results are compared with the experimental. Device design optimization issues are further discussed with respect to the applicable features of the Crosslight APSYS within the framework of drift-diffusion theory.