Development of Thermophotovoltaic Devices Optimized for High Temperature Operation

摘要

The recent interest in thermophotovoltaics (TPV) for space power applications has necessitated consideration of new device designs that are optimized for operation at elevated temperatures in order to be compatible with practical space-platform power systems. Photovoltaic device performance degrades as operating temperature is increased due to increasing dark current density (Jo). A cooling system is therefore required to maintain a low cell temperature with respect to the emitter (～1300 K). However, the cold-side cooling capacity is directly related to the temperature, size and mass of a passive radiator. Therefore, since a high power to weight ratio is a critical factor for spacecraft power system design, the ability to realize devices capable of improved power density at elevated temperatures is critical to minimize the mass of space TPV systems. A simple model has been developed to estimate the effect of temperature on device electrical properties. Design parameters under investigation are the modification of bandgap, layer thickness and doping levels in the active device junction. Preliminary results of the modeling effort suggest that the optimum design for a device operated at room temperature differs from that of a device operated at elevated temperature.