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Preparation of Super-Hard Nanocomposite Films by ICP Assisted Magnetron Sputtering

机译:ICP辅助磁控溅射制备超硬纳米复合膜

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Super-hard nanocomposite films were deposited on Si(100) substrates with irradiation of a high-density (~2.0 mA/cm~2) low-energy (~22 eV) ion flux by an inductively coupled plasma (ICP) assistance to magnetron sputtering process. Low-stress, super-hard nanocomposite Ti-Cu-N and Ti-Si-N films could be synthesized at low deposition temperatures below 300 °C. Prepared films exhibited a pronounced TiN(200) texture and the film hardness was significantly enhanced by the addition of Cu and Si, where a maximum value of 42 GPa at approximately 2 at% Cu addition and 48 GPa at approximately 5.8 at.% Si. Ti-Cu-N films were consisting of nanocolumns of TiN crystallites with dispersion of Cu crystallites around the columnar boundaries. While Ti-Si-N films were characterized as having a nanocolumns of TiN crystallites with amorphous Si_3N_4 inside the columnar boundaries. The residual compressive stresses of these films were lower than 1.5 GPa and no refinement of crystallite size by the addition of Cu and /or Si was observed, from which the hardness enhancement was attributed to a nanocomposite effect.
机译:通过电感耦合的等离子体(ICP)辅助沉积高密度(〜2.0mA / cm〜2)低能量(〜22eV)离子通量的高密度(〜2.0mA / cm〜2)低能量(〜22eV)离子通量的Si(100)衬底上沉积超硬纳米复合膜。溅射过程。可以在低于300℃的低沉积温度下合成低应力,超硬纳米复合二-Cu-n和Ti-Si-N膜。制备的薄膜表现出明显的锡(200)纹理,并通过加入Cu和Si显着提高膜硬度,其中最大值为42gPa,在约2个以%Cu加成和48gPa为约5.8.%Si。 Ti-Cu-N膜由锡晶体的纳米柱组成,具有Cu结晶围绕柱状边界的分散。虽然Ti-Si-N膜的特征在于在柱状边界内具有与无定形Si_3N_4的锡微晶的纳米柱。这些膜的残余压缩应力低于1.5GPa,并且观察到通过添加Cu和/或Si的微晶尺寸的细化,其中硬度增强归因于纳米复合效应。

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