Afterpulsing in InGaAs/InP Single Photon Avalanche Photodetectors

摘要

The effect of short gating pulses on after-pulsing in a single photon avalanche photodetector operating at a telecom wavelength of 1.5 μm is characterized and discussed. Comparison between short and longer overbias gate pulses shows that the number of carriers created with a 1 ns (short) gating pulse is lower than that of a 20 ns pulse, when the avalanche is dark-count generated.