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One-electron Pseudopotential Investigation of the RbAr and FrAr van der Waals Systems

机译:RBAR和FRAR VAN DER WALS系统的一个电子伪软化调查

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The potential energy curves of the ground state and many excited states of RbAr and FrAr van der Waals systems have been determined using a one-electron pseudopotential approach. The pseudopotential technique is used to replace the effect of the Rb~+ and Fr~+ cores and the electron-Ar interaction. In addition a core-core interaction is included. This has permitted to reduce the number of active electrons of the RbAr and FrAr systems to only one electron, the valence electron. This has led to use very large basis sets for Rb, Fr and Ar atoms. In this context, the potential energy curves of the ground and many excited states are performed at the SCF level. The core-core interactions for Rb~+Ar and Fr~+Ar are included using the CCSD(T) accurate potentials of Hickling et al. [H. Hickling, L. Viehland, D. Shepherd, P. Soldan, E. Lee and T. Wright, Phys. Chem. Chem. Phys. 6 (2004) 4233]. In addition, the spectroscopic constants of these states are derived and compared with the available theoretical works. Such comparison for RbAr has shown a very good agreement for the ground and the first excited states. However, the FrAr system was not studied previously and its spectroscopic constants are presented here for the first time.
机译:已经使用单电子伪势方法确定地面状态和rbar和frar van der waals系统的地面状态和许多激发状态的潜在能量曲线。伪软件技术用于取代RB〜+和FR +芯的效果和电子 - AR相互作用。此外,还包括核心核心互动。这允许将RBAR和FRAR系统的主动电子的数量减少到仅一个电子,该价电子。这导致RB,FR和AR原子使用非常大的基础组。在这种情况下,地面和许多激发态的潜在能量曲线在SCF水平上进行。使用HICKLING等人的CCSD(T)准确的潜力包括RB〜+ AR和FR〜+ AR的核心核心相互作用。 [H。 Hickling,L.Viehland,D. Shepherd,P. Soldan,E. Lee和T. Wright,Phyight,Phy。化学。化学。物理。 6(2004)4233]。此外,与可用的理论作品相比,这些状态的光谱常数是衍生的,并与可用的理论作品进行比较。 rbar的这种比较已经为地面和第一个激发州表示了很好的一致。然而,先前未研究FRAR系统,并且其光谱常数首次呈现。

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