Unified Regional Charge-based Versus Surface-potential-based Compact Modeling Approaches

摘要

This paper outlines the key features and advantages of the unified regional charge-based approach to MOSFET compact charge modeling in comparison with surface-potential- based approaches. Physical piecewise solutions are regionally derived from Pao-Sah equation, in which bulk charge is modeled by direct addition of accumulation and depletion charges based on the unified regional (source-end) surface potential. Drain-bias-dependent bulk and inversion charges are modeled with the unified regional charges in strong inversion using the non-pinned surface potential. Results have been compared with the iterative solutions and validated with numerical data. It has been extended to poly-accumulation/depletion/inversion effects with explicitly coupled quantum-mechanical effect as well as to strained-Si MOSFETs within the same unified model.