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Analysis of free-carrier charges distribution in the n-GaAs monocrystals used at formation of the high-resistance material for the ionizing radiation sensors

机译:在形成电离辐射传感器的高电阻材料中使用的N-GaAs单晶中的自由载波电荷分布分析

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摘要

In the paper, analysis of charge distribution in the gallium arsenide monocrystals are presented. The absorption spectrums are investigated. It is described that non-destroying testing of monocrystals before diffusion is possible.
机译:本文提出了砷化镓单晶中的电荷分布分析。研究了吸收光谱。描述了在扩散之前的单晶的非破坏性测试是可能的。

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