A high linearity low noise amplifier in a 0.35/spl mu/m SiGe BiCMOS for WCDMA applications

摘要

In this paper, a low noise amplifier (LNA) in a 0.35 /spl mu/m SiGe BiCMOS technology for WCDMA applications is presented. The designed LNA exhibits a noise figure of 1.65 dB and a power gain of 20 dB. Besides, two different base bias circuits are integrated in the LNA. One is a conventional resistor feed circuit, and the other is an active feed circuit. By using the active biasing technique for the base of the HBT, the 1-dB compression point (P1dB) can be extended. Compared with the resistor feed circuit, more than 8 dB improvement in P1dB is achieved with the active feed circuit. The measured input P1dB and IP3 arc -12.3 dBm and -0.5 dBm, respectively. This LNA is packaged in a QFN package and dissipates 6.4 mA from a 2.7 V supply.