10 GB/s SiGe MODULATOR DRIVERS WITH 4.5 V{sub}(PP) OUTPUT SWING

摘要

This paper presents 10-Gb/s modulator drivers employing novel cascode configuration with double output swing. The cascode drivers in 0.35μm SiGe BiCMOS technology exhibit high output swing of 4.5 V{sub}(pp). It is the highest value among reported silicon-based drivers.