A CMOS 5-GHz Micro-Power LNA

摘要

A fully integrated LNA suitable for ultra-low-voltage and ultra-low-power applications is designed and fabricated in a standard 0.18-μm CMOS technology. With complementary current-reused gain stages, the proposed amplifier exhibits 9.2-dB small-signal gain and 4.5-dB noise figure at 5 GHz while consuming 900-μW dc power from an extremely low supply voltage of 0.6 V. A gain/power quotient, which is widely used as the figure of merit for low-power amplifiers, of 10.2 dB/mW is achieved in this work.