Temperature Effect on the Performance of a Traveling Wave Amplifier in 130 nm SOI Technology

摘要

The behavior of an integrated traveling wave amplifier (TWA) fabricated on 130 nm Silicon-on-Insulator (SOI) CMOS process has been characterized over a temperature range from 25°C to 250°C. The TWA is a four-stage cascode design which uses Floating Body (FB) transistors and microstrip lines as passives. A gain of 7 dB with a 0.4-27 GHz bandwidth is measured under 1.4 V supply voltage. The effects of high temperature are observed on the gain of the TWA, as well as on the SOI transistors and the microstrip lines.