Frequency domain-based extraction method of one-port device's non-linear state functions from large-signal measurements

摘要

A novel frequency domain-based method for the extraction of one-port device's non-linear constitutive relations directly from vector large-signal measurements is presented. A distinctive characteristic of the method is that it provides directly the charge-voltage state-function, without the need to perform the integration of the capacitance-voltage function as required by its time domain-based counterpart. The capabilities of the method are demonstrated by extracting the non-linear state-functions of a microwave diode from large-signal data generated by harmonic balance analysis, and the non-linear gate-source state-functions of a HEMT device under 'cold-FET' bias conditions from measured data.