Effects of the preparation conditions on the orientation and dielectric properties of PZT films prepared by PVP-assisted sol-gel method

摘要

PZT gel films were deposited on Pt(111)/TiO_2/SiO_2/Si(100) substrates by spin-coating using a solution of molar composition, Pb(NO_3)_2 : Zr(OC_3H_7~n)_4 : Ti(OC_3H_7~i)_4 : PVP : CH_3COCH_2COCH_3 : CH_3OC_2H_4OH : n-C_3H_7OH = 1.1 : 0.53 : 0.47 : 0.5 : 0.5 : 22 : 0.98. The gel films were heated at 300 deg C or 600 deg C for 10 min and then at 650 deg C for 10 min. In addition, in order to investigate the effects of a PbO seeding layer on crystallographic orientation, PbO gel films were deposited by spin-coating using a solution of molar composition, Pb(NO_3)_2 : CH_3OC_2H_4OH : PVP = 1.0 : 22 : 0.5, and heated at 500 deg C for 10 min. When pre-heating was conducted at 300 deg C, the film had no orientation, while pre-heating at 600 deg C resulted in higher PZT(100) intensity than (101). PZT(100) was also increased by introducing a seeding layer. These experimental results suggest that there is a possibility that the films with preferred orientation are obtained by controlling the heat-treatment conditions and by introducing the PbO seeding layer.