Study on ChemFET NO2 Gas Sensor Array

摘要

Based on the conventional MOSFET, a new kind of novel chemical field-effect transistor (ChemFET) gas sensor array has been designed and fabricated for the first time, which is a device with self-assembled polyaniline (PAN) composite films with polymeric acids deposited on the gate area of MOSFET replacing the gate metal. In this paper, the sensitive PAN composite films were characterized. The NO2 gas-sensing property of the ChemFET sensor array was investigated. The results show that the drain current of devices increases with the increasing back-surface voltage, and decreases with the increasing of NO2 concentration when the NO2 concentration is below 20 ppm.Then the characteristic of temperature dependence of the ChemFET sensor array was also studied, which shows that the drain current 01 ChemFET sensor decreases with the increasing temperature.The ChemFETs gas sensor array can be used for the quantificational detection of low concentration NO2 gas combining with the proper pattern recognition technique.