Study of High Electron Mobility Transistor (HEMT) Based Hydrogen Sensor

摘要

Today's pseudomorphic high electron mobility transistors (pHEMTs) have been applied cover extremely wide frequency range. In this paper, pHEMT structure combine with hydrogen sensor concept has been fabrication and simulation. The remarkable saturation current density explained that this studied is suitable to operate at room temperature without considering the influence from environmental noise. In addition, the Schottky barrier height lowered was demonstrated in this work.