V_2O_5 films consisting of densely packed, vertically aligned rods were deposited on the silicon substrates by heating a sheet of pure vanadium in a rough vacuum. The V2O5 rods were found to be of a body-centered-cubic (bec) structure with a lattice constant of 0.943 nm, which was not observed before, The structure, composition, chemical bonding and electrical property of the bcc-structured V2O5 film was characterized and investigated. The bcc-structured V2O5 film is semiconducting and exhibited upon heating, interestingly, a second-order phase transition at a critical point of ~ 120°C, below which the thermal activation energy (Ea) was - 0.103 eV and above which Ea was ~ 0.267 eV.
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