首页> 外文会议>China International Conference on High-Performance Ceramics >Effects of CuO-V{sub}2O{sub}5-Bi{sub}2O{sub}3 Additions on the Microstructure and Microwave Dielectric Properties of 0.42ZnNb{sub}2O{sub}6-0.58TiO{sub}2 Ceramics
【24h】

Effects of CuO-V{sub}2O{sub}5-Bi{sub}2O{sub}3 Additions on the Microstructure and Microwave Dielectric Properties of 0.42ZnNb{sub}2O{sub}6-0.58TiO{sub}2 Ceramics

机译:CUO-V {SUB} 2O {SUB} 5-BI {SUB} 2O {SUB} 3的微观结构和微波介质特性0.42ZNNBB的微波介质特性.6-0.58TIO {SUB} 2陶瓷

获取原文

摘要

The effects of additions on the microstructure and microwave dielectric properties of 0.42ZnNb{sub}2O{sub}6-0.58TiO{sub}2 (ZNT) ceramics were investigated systematically. The sintering temperature of ZNT ceramics doped with different amounts of CuO, Bi{sub}2O{sub}3 and V{sub}2O{sub}5 can be effectively reduced. The phase of doped samples was studied compared to the undoped ZNT ceramics. For densified ZNT ceramics with the increasing amount of dopant CuO-Bi{sub}2O{sub}3-V{sub}2O{sub}5, the dielectric constants (ε{sub}r) of densified samples ranges from 38 to 42, the Q·f values decrease evidently and ranges from 13300 GHz to 5000 GHz and the τ{sub}f values are shifted toward negative.
机译:系统地研究了添加到0.42zNNB {Sub} 2O {Sub} 6-0.58TiO {Sub} 2(ZnT)陶瓷的微观结构和微波介电性能的影响。可以有效地减少掺杂有不同量的CuO,Bi {Sub} 3和V {Sub} 3和V {Sub} 3掺杂ZnT陶瓷的烧结温度。与未掺杂的ZnT陶瓷相比,研究了掺杂样品的阶段。对于诸如掺杂剂Cuo-Bi {Sub} 2O {Sub} 3-V {Sub} 2O {Sub} 5的致密ZnT陶瓷,致密样的介电常数(ε{sub} r)的范围为38至42 ,Q·F值明显降低,范围从13300 GHz到5000 GHz,τ{sub} f值移向负。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号