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Synthesis of Millimeter Long Vertically Aligned Single-Walled Carbon Nanotubes by Point-Arc Microwave Plasma Cvd

机译:用点电弧微波等离子体CVD合成毫米长垂直对齐的单壁碳纳米管

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A decade has passed since the discovery of single-walled carbon nanotubes (SWNTs), but the main methods for synthesizing SWNTs such as laser ablation, arc discharge and thermal (or catalytic) chemical vapor deposition (CVD) are still subject to the following disadvantages; high (800-1200°C) growth temperature requirement, low production yield (the mass ratio of SWNTs to catalyst) or high catalyst contamination, and out of control of the as grown SWNTs (usually randomly oriented, entangled bundles or ropes). All these make the purification and application of SWNTs very difficult. Plasma assistant CVD is good at controlled growth of multi-walled carbon nanotubes (MWNTs) at low temperatures. However it rarely succeeded in the growth of SWNTs. In this study, we demonstrate the low temperature (600°C) synthesis of very dense (1E16/m2) and vertically aligned SWNTs by point-arc microwave plasma CVD [1], which overcomes all the above mentioned disadvantages. Vertically aligned SWNTs were synthesized at a low temperature of 600°C on Si substrates coated with a sandwich-like structure Al_2O_3 /Fe /Al_2O_3 (/Si). Al_2O_3 between Si and Fe is a buffer layer to prevent them from reacting. On the other hand, Al_2O_3 above the Fe film works as a barrier of the surface diffusion of catalytic atoms so that the aggregation of Fe atoms can be suppressed during the pre-heating time. As a result, dense catalytic particles can be formed and extremely dense and vertically aligned SWNTs can be synthesized. To identify the SWNT samples, TEM and Raman spectroscopy were used. TEM observations show that almost all tubes are single-walled. Raman spectra of as-grown SWNTs have fingerprint features of SWNTs: the sharp tangential mode G peak, the shoulder of G peak and the radial breathing mode (RBM) peaks. From the RBM peaks, their diameters range from 0.5 to 3.0 nm. The thickness of SWNTs can increase as the growth time increases, and the lifetime of the catalyst is more than 10 hours at the growth rate of 2 mum/min, so millimeter long vertically aligned SWNTs can be synthesized. A production yield (mass ratio of SWNTs to catalyst) and a volume density are 2,500,000% and 66 kg/m3, respectively. The production yield is 50 times as high as that reported by Hata[2]. Up to now, the growth temperature about 600°C is the lowest, while both the volume density and the production yield are the highest for the synthesis of SWNTs. We have also succeeded in position control of SWNTs, showing potential for applied researches such as field emitters and vertically aligned field effect transistors using our as-grown vertically aligned SWNTs without further purification. [1] G. Zhong et al., Chem. Vap. Deposition 11, 127 (2005) [2] K. Hata et al., Science 306, 1362 (2004).
机译:自单壁碳纳米管(SWNT)的发现十年已过,但用于合成的SWNT,如激光烧蚀,电弧放电和热(或催化)化学气相沉积(CVD)的主要方法仍受到以下缺点;高(800-1200℃)的生长温度的要求,低产量或高的催化剂污染(单壁碳纳米管以催化剂的质量比),并从生长的作为单壁碳纳米管的控制(通常随机取向的,缠结束或绳)。这些都使得单壁碳纳米管的纯化和应用非常困难。等离子体CVD助理善于在低温下的多壁碳纳米管(MWNT)的受控生长。然而,很少成功的单壁碳纳米管的生长。在这项研究中,我们证明了低温由点弧微波等离子体CVD(600℃)合成非常密集(1E16 / m2)和垂直对准的单壁碳纳米管的[1],其克服了所有上述缺点的上方。垂直排列的SWNT在600℃下对涂有夹层状结构Al_2O_3的/铁/ Al_2O_3的(/ Si)的Si衬底的低温下合成的。硅和铁之间Al_2O_3的是缓冲层,以防止它们反应。在另一方面,在Al_2O_3的Fe膜上面可以作为催化的原子,使得Fe原子的聚合可以在预加热时间被抑制的表面扩散的阻挡。其结果,致密的催化粒子可以形成和非常致密和垂直对准的单壁碳纳米管可以合成。要确定SWNT样品,TEM和拉曼光谱中使用。 TEM观察结果表明,几乎所有的管是单壁。所生长的单壁碳纳米管的拉曼光谱具有单壁碳纳米管的指纹特征:所述锋利的切向模式G峰,G峰的肩部和所述径向呼吸模式(RBM)的峰。从RBM峰,它们的直径范围从0.5至3.0纳米。单壁碳纳米管的厚度可以增加,因为生长时间的增加,催化剂的寿命是在2 MUM /分钟的生长速度超过10小时,那么毫米长垂直对准的单壁碳纳米管可以合成。的制造产率(的SWNT以催化剂的质量比),体积密度是250万%和66千克/立方米,分别。产率是作为由Hata [2]报道50倍高。到现在为止,约600℃的生长温度是最低的,而无论是体积密度和生产成品率是最高的为单壁碳纳米管的合成。我们还成功地SWNT的位置控制,示出了用于应用研究,如使用我们的作为生长垂直排列的SWNT不经进一步纯化字段发射器和垂直对准的场效应晶体管的潜力。 [1] G. Zhong等人,Chem。 VAP。沉积11,127(2005)[2] K. Hata等人,Science 306,1362(2004)。

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