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首页> 外文期刊>The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical >Direct Evidence for Root Growth of Vertically Aligned Single-Walled Carbon Nanotubes by Microwave Plasma Chemical Vapor Deposition
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Direct Evidence for Root Growth of Vertically Aligned Single-Walled Carbon Nanotubes by Microwave Plasma Chemical Vapor Deposition

机译:微波等离子体化学气相沉积法垂直排列的单壁碳纳米管根生长的直接证据。

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摘要

The root growth mode of extremely dense and vertically aligned single-walled carbon nanotubes (SWNTs) synthesized by microwave plasma chemical vapor deposition was clarified by a new method,marker growth,which does not require transmission electron microscopy.SWNT layers were grown intermittently on a substrate,and a line between the layers was used as a marker to identify the growth mode.Micro-Raman spectroscopy revealed that the SWNT layers have the same diameter distribution.
机译:微波等离子体化学气相沉积合成的极致密和垂直排列的单壁碳纳米管(SWNTs)的根生长模式通过一种不需要标记物生长的新方法得以阐明,该方法不需要透射电子显微镜。拉曼光谱显示SWNT层具有相同的直径分布。

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