【24h】

SUPER-POISSONIAN NOISE IN NANOSTRUCTURES

机译:纳米结构的超级泊松噪声

获取原文

摘要

We describe the transition from sub-Poissonian to super-Poissonian values of the zero-temperature shot noise power of a resonant double barrier of macroscopic cross-section. This transition occurs for driving voltages which are sufficiently strong to bring the system near an instability threshold. It is shown that interactions in combination with the energy dependence of the tunneling rates dramatically affect the noise level in such a system. Interaction-induced fluctuations of the band bottom of the well contribute to the noise and lead to a new energy in the Fano factor. They can enhance the noise to super-Poissonian values in a voltage range preceding the instability threshold of the system. This mechanism is different from the super-Poissonian enhancement due to the large effective charge.
机译:我们描述了从次泊尼斯到宏观横截面谐振双屏障的零温度射噪功率的超级泊松值的过渡。发生这种转换,用于驱动电压,其足够强以使系统接近不稳定性阈值。结果表明,与隧道速率的能量依赖性结合的交互显着地影响了这种系统中的噪声水平。相互作用诱导的带底部井底的波动有助于噪音,导致FANO因子中的新能量。它们可以在系统的不稳定性阈值之前的电压范围内提高噪声对超级泊松值。由于大有效充电,这种机制与超级泊松增强不同。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号