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MICROWAVE NOISE AND FAST/ULTRAFAST ELECTRONIC PROCESSES IN NITRIDE 2DEG CHANNELS

机译:微波噪声和快速/超快电子过程在氮化物2deg通道中

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Microwave noise technique is applied to study ultrafast correlations in AlGaN/GaN and AlN/GaN two-dimensional electron gas (2DEG) channels subjected to a strong electric field applied in the plane of electron confinement. The experimental data are discussed in terms of hot-electron-energy dissipation on phonons, longitudinal-optical (LO) phonon conversion into other phonon modes, and hot-electron deconfinement. At high electric fields, the hot-electron energy relaxation is limited by the LO-phonon conversion. The LO-phonon conversion lifetime is estimated to be 350 fs in AlGaN/GaN channel. The lifetime is a useful parameter for extrapolation of hot-electron temperature beyond the field range where it is available from microwave noise experiments. The extrapolated hot-electron temperature is used to discuss hot-electron deconfinement noise.
机译:应用微波噪声技术来研究AlGaN / GaN和AlN / GaN二维电子气(2deg)通道中的超快相关性,其经受在电子监禁平面中施加的强电场。在声子上的热电子 - 能量耗散方面讨论了实验数据,纵向光学(LO)声子转换成其他声子模式,以及热电子解构。在高电场,热电子能量松弛受到LO-Phonon转换的限制。 LO-Phonon转换寿命估计为AlGaN / GaN通道中的350 FS。寿命是用于在微波噪声实验中获得的电磁温度超出热电温度的有用参数。外推热电子温度用于讨论热电子解序噪声。

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