1/fNOISE IN MOSTs: FASTER IS NOISIER

摘要

Circuit-simulation-oriented equations (SPICE and BSIM3) for the 1/f noise are discussed and their fitting parameters are translated in the 1/f noise parameter α. The effect of scaling down on the 1/f noise is studied in the ohmic region as well as in saturation and sub-threshold. A prospective for scaling down is given for channel length L < 0.12 μm where velocity saturation becomes dominant. A relation is proposed between the 1/f noise corner frequency f_c., where the 1/f noise is equal to the thermal noise, and the unit current gain frequency f_I. Faster devices (with higher f_T) are inherently noisier considering f_C Approximately holds, 10~(-4)f_T