Low profile power module combined with state of the art MOSFET switches and SiC diodes allows high frequency and very compact three-phase sinusoidal input rectifiers

摘要

This paper focuses on the advantages of low profile and therefore low inductance power modules to achieve very compact power systems. Such power devices integrate state of art Super Junction MOSFET devices and latest SiC diodes for increased operating frequency and highest efficiency. A six-switch Vienna Rectifier is the topology embedded in the power module and a 10 kW output power, very compact (8.5 kW/litre) and efficient rectifier has been developed as a demonstrator by the Power Electronic Systems Laboratory at ETH Zurich.