An SiC MOSFET and Si Diode Hybrid Three-Phase High-Power Three-Level Rectifier

Chushan Li; Qing-xin Guan; Jintao Lei; Chengmin Li; Yu Zhang; Shuai Wang; David Xu; Wuhua Li; Hao Ma

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An SiC MOSFET and Si Diode Hybrid Three-Phase High-Power Three-Level Rectifier

机译：SiC MOSFET和Si二极管混合三相大功率三电平整流器

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摘要

The utilization of wide bandgap devices such as silicon carbide (SiC) diode and mosfet can significantly increase the power density and the efficiency of rectifier circuits. However, SiC-based circuits always suffer from the high cost of their power stage

机译：宽带隙器件（例如碳化硅（SiC）二极管和mosfet）的利用可以显着提高功率密度和整流器电路的效率。然而，基于SiC的电路总是遭受其功率级高昂成本的困扰

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来源
《IEEE Transactions on Power Electronics》 |2019年第7期|6076-6087|共12页
作者
Chushan Li; Qing-xin Guan; Jintao Lei; Chengmin Li; Yu Zhang; Shuai Wang; David Xu; Wuhua Li; Hao Ma;
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作者单位

Zhejiang University—University of Illinois at Urbana-Champaign Institute Hangzhou China;

State Key Laboratory of Advanced Electromagnetic Engineering and Technology School of Electrical and Electronic Engineering Huazhong University of Science and Tech;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
Rectifiers; Silicon carbide; Silicon; Schottky diodes; MOSFET; Switching circuits; Switching loss;

机译：整流器;碳化硅;硅;肖特基二极管;MOSFET;开关电路;开关损耗;
入库时间 2022-08-18 04:35:34

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1. Design Comparison of High-Power Medium-Voltage Converters Based on a 6.5-kV Si-IGBT/Si-PiN Diode, a 6.5-kV Si-IGBT/SiC-JBS Diode, and a 10-kV SiC-MOSFET/SiC-JBS Diode [J] . Mirzaee H., De A., Tripathi A., Industry Applications, IEEE Transactions on . 2014,第4期

机译：基于6.5 kV Si-IGBT / Si-PiN二极管，6.5 kV Si-IGBT / SiC-JBS二极管和10kV SiC-MOSFET / SiC-JBS的大功率中压转换器的设计比较二极管
2. Analysis of High-Efficiency Three-Phase Two- and Three-Level Unidirectional Hybrid Rectifiers [J] . Soeiro T.B., Kolar J.W. Industrial Electronics, IEEE Transactions on . 2013,第9期

机译：高效三相两电平和三电平单向混合整流器的分析
3. 99% Efficient three-phase buck-type SiC MOSFET PFC rectifier minimizing life cycle cost in DC data centers [J] . Lukas Schrittwieser, Johann W. Kolar, Thiago Batista Soeiro CPSS Transactions on Power Electronics and Applications . 2017,第1期

机译：效率高达99％的三相降压型SiC MOSFET PFC整流器，可将直流数据中心的生命周期成本降至最低
4. High power three-level rectifier comprising SiC MOSFET Si diode hybrid power stage [C] . Chushan Li, Jintao Lei, Qingxin Guan, IEEE Applied Power Electronics Conference and Exposition . 2018

机译：包含SiC MOSFET和Si二极管混合功率级的高功率三电平整流器
5. Design, Simulation and Implementation of Three-Phase Bidirectional DC-DC Dual Active Bridge Converter Using SiC MOSFETs. [D] . Aldawsari, Tariq. 2014

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6. Sensing and Reliability Improvement of Electrostatic-Discharge Transient by Discrete Engineering for High-Voltage 60-V n-Channel Lateral-Diffused MOSFETs with Embedded Silicon-Controlled Rectifiers [O] . Shen-Li Chen, Yi-Cih Wu 2018

机译：分立工程用于嵌入式硅控整流器的高压60V n沟道横向扩散MOSFET的瞬态传感和可靠性改善。
7. Cost-Effective Matrix Rectifier Operating With Hybrid Bidirectional Switch Configuration Based on Si IGBTs and SiC MOSFETs [O] . Bryan Gutierrez, Sang-Shin Kwak 2020

机译：经济高效的矩阵整流器，基于SI IGBT和SIC MOSFET的混合双向开关配置运行

An SiC MOSFET and Si Diode Hybrid Three-Phase High-Power Three-Level Rectifier

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