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The saw-damage-induced structural defects on the surface of silicon crystals

机译:硅晶体表面上的锯切诱导的结构缺陷

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During the process of cutting silicon ingots into wafers, saw damage is produced on the surface of silicon crystals. This saw damage induces defects during the oxidation of the silicon. Unlike silica slurry wet blasting, which is known to induce OISF (Oxidation-Induced Stacking Faults), saw damage produced by the wire sawing process induces the generation of dislocation loops during the oxidation process. The type of defects formed during the oxidation process seems to depend on the amount of damage: if the damage is bigger than some critical value, then dislocation loops are generated. If the damage is smaller than this critical value, then stacking faults are generated during oxidation.
机译:在将硅锭切成晶片的过程中,在硅晶体的表面上产生锯损伤。这扫描损伤在硅氧化过程中诱导缺陷。与已知的二氧化​​硅浆料湿爆炸,已知诱导OISF(氧化诱导的堆叠故障),由线锯工艺产生的锯切造成在氧化过程中引起位错环的产生。在氧化过程中形成的缺陷类型似乎取决于损坏量:如果损坏大于一些临界值,则生成位错环。如果损坏小于该临界值,则在氧化过程中产生堆叠故障。

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