Ⅲ-Ⅴ TERNARY BULK CRYSTAL GROWTH TECHNOLOGY

摘要

Semiconductor substrates with variable band gaps and lattice constants are key enablers for advanced electronic, optoelectronic, and photovoltaic devices. The key growth parameters necessary for the growth of device quality bulk ternary crystals of GaInSb, GaInAs, GaInP, AlInSb and InAsSb will be discussed.