EFFECTIVE NITROGEN DOPING OF ZINC OXIDE

摘要

Reactive radio-frequency magnetron sputtering of a zinc metal target was used to prepare nitrogen doped zinc oxide thin films. To fabricate a variety of nitrogen doped zinc oxide films, the oxygen partial pressure in the sputtering gas was systematically varied. X-ray photoelectron and Raman spectroscopy analyses have revealed that effective nitrogen doping in zinc oxide films can only be achieved by utilizing a low oxygen partial pressure in the sputtering gas and these results are discussed in detail.