DIRECTION OF EXCITED CARRIERS FROM LOW IN FACETS OF INGAN MICROCRYSTALS OBSERVED IN THE HIGHLY SPATIALLY RESOLVED CATHODOLUMINESCENT IMAGES

摘要

We observed room temperature monochromatic cathodo-luminescence images at 420 and 460 run at 3 kV from facets of synthesized InGaN microcrystals under a scanning electron microscope with a highly spatially resolved CL apparatus. Facets containing low In emitting at 420 nm and those containing high In at 460 nm. By comparing two CL images for facets, bright and dark patterns looked almost complementary each other, however, the width of a dark zone in the 420 nm image was wider than that of the bright zone in the 460 nm image. The reason was explained by the diffusion of excited carriers from low-In-content region to high-In-content region, that is carrier localization.