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SIC CRYSTAL GROWTH AT LOW TEMPERATURES DERIVED FROM POLYCARBOSILANE WITH BORON CARBIDE ADDITIVE

机译:低温下的SiC晶体生长来自聚碳硅烷与硼碳化物添加剂

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This paper describes the experimental results on microstructural observations and tensile tests of Al joined boron carbide (B4C) bulks coated by silicon carbide (SiC). For the formation of SiC coating, polycarbosilane (PCS) was applied and pyrolyzed on the bulk surface in Ar gas. Then, the reaction of B4C, Al and PCS mixed powders in air was investigated by phase identification and thermogravimetric analysis of the heat treated powders.
机译:本文介绍了碳化硅(SiC)涂覆的Al连接硼碳化硼(B4C)块的显微结构观测和拉伸试验的实验结果。为了形成SiC涂层,在Ar气体中施加聚碳硅烷(PC)并热解。然后,通过相位鉴定和热处理粉末的热重分析研究了B4C,Al和PCS混合粉末的反应。

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