CHARACTERIZATION OF MIS TUNNEL JUNCTIONS BY INELASTIC ELECTRON TUNNELING SPECTROSCOPY (IETS)

摘要

In this work, we show the ability to characterize Al-SiO_2-Si (n+) or (p+) junctions with ultra-thin oxide by inelastic electron tunneling spectroscopy. We compare the phonon modes spectra of silicon substrate, on both (111) and (100) silicon orientation on Al-SiO_2-Si (n+) junctions. We compare also, the phonon spectrum of the aluminum gate of an Al-SiO_2-Si (p+) (100) junction with an Al-Al_2O_3-Al MIM tunneling junction.