SILICON DIOXIDE INSULATING FILMS FOR SILICON-GERMANIUM TECHNOLOGY

摘要

Silicon-Germanium (Si_XGe_(1-X)) insulated gate metal-oxide semiconductor modulation-doped field effect transistors (MOS-MODFET's) have been investigated to develop silicon-germanium technology. This paper describes the design, fabrication process and characterization of insulated-gate MODFET devices as a test vehicle to investigate the silicon-germanium technology.