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CROSSED ANDREEV REFLECTION-INDUCED GIANTNEGATIVE MAGNETORESISTANCE

机译:交叉Andreev反射诱导的巨型磁阻

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We show that very large negative magnetoresistance can be obtained in magnetic trilayersin a current-in-plane geometry owing to the existence of crossed Andreev reflection. Thisspin-valve consists of a thin superconducting film sandwiched between two ferromagneticlayers whose magnetization is allowed to be either parallelly or antiparallelly aligned. Fora suitable choice of structure parameters and nearly fully spin-polarized ferromagnetsthe magnetoresistance approaches —80%. Our results are relevant for the design andimplementation of spintronic devices exploiting ferromagnet-superconductor structures.
机译:我们表明,由于横向的AndreeV反射的存在,在磁性三角层中可以在磁性三角层中获得非常大的负磁阻。该阀由夹在两个铁磁层夹在其磁化被允许并平行或反式对齐之间的薄的超导膜组成。对于合适的结构参数选择和几乎完全旋转偏振的铁磁性磁阻方法-80%。我们的结果与利用铁磁素超导体结构的闪光装置的设计和依据相关。

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