A New Consideration of Correlation Between External Noise Sources in HEMT Two-Temperature Model

摘要

In this paper we have considered correlation between equivalent gate and drain noise sources in two-temperature model to demonstrate a better compatibility between measured noise parameters (Y{sub}(opt), R{sub}n, F{sub}(min)) and the results from simulation. The originality of the contribution lies in considering correlation between external input and output equivalent noise temperatures (T{sub}(in) and T{sub}(aut)) for transistor.