A measurement based model of HEMT teking into account the non linear, non uniform transmission line nature of the channel its associated low frequency noise sources

摘要

For the first time, a fully measurement based extraction procedure of non linear and non uniform transmission line model of FET devices is proposed. This model describes accurately the distributed nature under the device gate which allows a good distortion prediction (IM3) and promises good perspectives for simulation of noise characteristics in non linear circuits.