Growth Methods and Properties of High PurityIII-V Nanowires by Molecular Beam Epitaxy

摘要

The synthesis and properties of catalyst-free III-V nanowires with MBEis reviewed. The two main methods are Selective Area Epitaxy and gallium-assistedsynthesis. The growth mechanisms are reviewed, along with the design possibilitiesof each technique. Finally, the excellent structure and ultra-high purity are presentedby Raman and Photoluminescence spectroscopy.