首页> 外文会议>Symposium E, "Materials for high-temperature superconductor technologies" >Crystal growth and superconducting properties of Bi{sub}2Sr{sub}2Ca{sub}2Cu{sub}3O{sub}y(Bi2223) single crystals
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Crystal growth and superconducting properties of Bi{sub}2Sr{sub}2Ca{sub}2Cu{sub}3O{sub}y(Bi2223) single crystals

机译:Bi {sub} 2sr {sub} 2ca {sub} 2cu {sub} 3o {sub} y(bi2223)单晶的晶体生长和超导特性

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Bi2223 single crystals were grown by the floating zone method with an extremely slow growth rate of 0.05 mm/h. The largest size of the plate-like single crystal was approximately 3 × 2 × 0.1 mm{sup}3. The X-ray diffraction analysis and DC susceptibility measurements revealed that the grown crystals were almost single phase of Bi2223 with a very small percentage of Bi2212 intergrowth. Then carrier doping was systematically controlled in a wide range from underdoping to overdoping by post annealing under various conditions. T{sub}c of the crystals was found to vary from 98 K (underdoped) to 108 K (overdoped) with T{sub}c = 110 K for optimally-doped. In the optimally-doped phase the electromagnetic anisotropy factor, γ{sup}2 of Bi2223 was smaller than that of Bi2212. Abrupt resistivity drop was observed under fields below the second peak field of the magnetization hysteresis loops, suggesting a first order phase transition of the flux line lattice. Magnetic phase diagram of Bi2223 single crystals for H∥C was found to be similar to that of Bi2212.
机译:通过浮区法生长Bi2223单晶,其增长率极低为0.05mm / h。板状单晶的最大尺寸约为3×2×0.1mm {sup} 3。 X射线衍射分析和直流敏感性测量显示,生长的晶体几乎是Bi2223的单相,BI2212晶间百分比非常小。然后在各种条件下通过在各种条件下进行退火来系统地控制载体掺杂在宽范围内。发现晶体的{亚} C从98K(下掺杂)至108k(过掺杂)与T {sub} c = 110k以最佳掺杂的。在最佳掺杂的阶段中,Bi2223的电磁各向异性因子,γ{sup} 2小于Bi22212的电磁各向异性因子,γ{sup} 2小于Bi22212的电磁各向异性因子。在磁化滞后环的第二峰场下方观察到突变电阻率下降,表明磁通线晶格的一阶相转变。发现H∥C的Bi2223单晶的磁相图类似于BI2212的单晶。

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