REALISTIC ATOMISTIC MODELING OF MOUND FORMATION DURING MULTILAYER GROWTH: METAL(100) HOMOEPITAXY

摘要

A realistic atomistic lattice-gas model is developed which describes the key features of film morphologies observed for multilayer ho-moepitaxial growth on Ag(100) in the temperature range 175-300 K corresponding to "mound formation". The model accounts for irreversible formation of islands in each layer mediated by terrace diffusion, growth coalescence of islands within each layer, a non-uniform step edge barrier inhibiting downward transport, and restricted rounding of kinks by adatoms at island edges (at lower temperatures).