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Hartree-fock semiconductor Bloch equations and charge density correlations

机译:Hartree-Fock半导体Bloch方程和充电密度相关性

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Generalized Semiconducor Bloch Equations are derived with using the fluctuation-dissipation theorem. Four operator expectation values like density-density correlators are calculated with account of coherent memory effects. Interactions with mixed plasmon-phonons modes and excitonic effects are taken into account. Comparison with different other theoretical approaches is provided. Numerical calculations of the spontaneous radiation produced by interband multiplasmon recombination of electron-hole pairs are fulfilled in dependence on the temperature and plasma concentration. It is shown that the intensity maximum of spontaneous radiation shifted to the region of the first LO-phonon satellite with increasing of concentration in accordance with experiments [19,21].
机译:广义半导体BLOCH方程是使用波动耗散定理来源的。使用相干的内存效果计算浓度密度相关器等四个操作员期望值。考虑了与混合等离子体 - 声子模式和激发器效应的相互作用。提供了与不同其他理论方法的比较。通过依赖于温度和等离子体浓度来满足由电子空穴对的间带多氯联组重组产生的自发辐射的数值计算。结果表明,根据实验的浓度的增加,自发辐射的强度最大偏移移动到第一个LO-Phonon卫星的区域[19,21]。

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