The noise spectroscopy measurement and third harmonic testing of thick-film resistors is proposed as a diagnostic tool for the prediction of possible types of failure. The sources of fluctuations are both in the resistor volume and in contact region. There are two sources of noise and non-linearity in the resistor volume: the junctions between the metallic grains and glass layers and defects of the thick conducting layer structure. 1/f noise in low frequency range is given by two components: fundamental 1/f noise, and excess 1/f{sup}a noise created by defects. Carrier transport in thick conducting layers is not strictly linear and third harmonic voltage is proportional to the third power of electric field intensity or current density. It was proved experimentally, that the noise spectral density is inversely proportional to the square of sample length, or electric field intensity. Screening of thick-film resistors by noise and non-linearity indicators selects samples, which are anomalous.
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机译：提出了厚膜电阻器的噪声光谱测量和三次谐波测试作为预测可能类型的故障的诊断工具。波动源在电阻器体积和接触区域中。电阻容积中有两个噪声和非线性源：金属晶粒和玻璃层之间的连接和厚导电层结构的缺陷。低频范围内的1 / f噪声由两个组件给出：基本1 / f噪声，多余的1 / f {sup}由缺陷产生的噪音。厚导电层的载波传输不是严格的线性，第三谐波电压与电场强度或电流密度的第三功率成比例。实验证明，噪声光谱密度与样本长度或电场强度的平方成反比。通过噪声和非线性指示器筛选厚膜电阻器选择样品，这些样品是异常的。
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