RELATION BETWEEN DEGRADATION OF ELECTRICAL PARAMETERS OF MOS TRANSISTORS BY HOT CARRIER INJECTION AND THEIR DRIFT DUE TO RADIATION FOR A NEW RADHARDENED ACMOS FAMILY

摘要

Space environment induces degradations, which affect electrical performances of MOS transistors in satellites. It is very interesting to prevent such degradations, to be more competitive and to mainly satisfy customers in the best conditions. But the tests by ionizing radiations are long and expensive. That's why we would like to predict the effects of radiation by using tests with hot-carrier injection. Indeed the degradations induced with hot-carrier and radiations effects are similar. Oxide is damaged by charge trapping and interface states generation. Electrical parameters such as threshold voltage, linear current and transconductance are affected. Our study consists to find a correlation between the degradations of MOS transistors induced with hot-carrier and their damages due to gamma radiation environment.