GaAs-based red-emitting InAlAs/AlGaAs quantum dots and quantum-dot laser

摘要

Semiconductor quantum dots (QDs) are the subject of extensive study due to their promising applications in novel optoelectronics devices. However relatively few studies of red-emitting QDs have been reported due mainly to the difficulty in fabricating high-quality InAlAs/AlGaAs on GaAs substrates. We study the effect of growth temperature on the optical and structural properties of InAlAs/AlGaAs QDs. With increasing substrate temperature from 530 to 560 °C, a significant improvement in the QD material quality is observed. In addition at room temperature, ground state lasing is demonstrated for a laser with six InAlAs/AlGaAs QD layers grown at 560 °C.